Density Functional Theory Study of the Gas Phase and Surface Reaction Kinetics for the MOVPE Growth of GaAs1-yBiy. Journal of Physical Chemistry A. 2020 ;124:1682-1697..
High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. ACS Applied Materials and Interfaces. 2020 ;12:20859-20866..
High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. ACS Applied Materials & Interfaces. 2020 ;12:20859-20866..
Layer-thickness dependence of the compositions in strained III-V superlattices by atom probe tomography. Journal of Crystal Growth. 2020 ;535..
Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1-xGaxAs1-yBiy and its kinetics of growth. Journal of Crystal Growth. 2020 ;538..
Synthesis Gas Conversion Over Molybdenum-Based Catalysts Promoted by Transition Metals. ACS Catalysis. 2020 ;10:365-374..
Thermodynamic stability analysis of Bi-containing III-V quaternary alloys and the effect of epitaxial strain. Journal of Physics and Chemistry of Solids. 2020 ;138..
Anode-originated SEI migration contributes to formation of cathode-electrolyte interphase layer (vol 373, pg 184, 2018). Journal of Power Sources. 2019 ;421:32-32..
Electrically injected 1.64 mu m emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express. 2019 ;27:33205-33216..
Highly tin doped GaAs at low growth temperatures using tetraethyl tin by. Journal of Crystal Growth. 2019 ;507:255-259..
III-V Superlattices on InP/Si Metamorphic Buffer Layers for lambda approximate to 4.8 mu m Quantum Cascade Lasers. Physica Status Solidi a-Applications and Materials Science. 2019 ;216.
Impact of InGaAs carrier collection quantum well on the performance of. Semiconductor Science and Technology. 2019 ;34:025012..
Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers. Iet Optoelectronics. 2019 ;13:12-16..
Modeling of transport and reaction in a novel hydride vapor phase epitaxy system. Journal of Crystal Growth. 2019 ;513:58-68..
Seeded Lateral Solid-Phase Crystallization of the Perovskite Oxide SrTiO3. Journal of Physical Chemistry C. 2019 ;123:7447-7456.
Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices. Acs Applied Nano Materials. 2019 ;2:7449-7458..
Anode-originated SEI migration contributes to formation of cathode electrolyte interphase layer. Journal of Power Sources. 2018 ;373:184-192..
Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing. Journal of Applied Physics. 2018 ;123..
Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy. Current Opinion in Solid State & Materials Science. 2018 ;22:229-242..
Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography. Crystals. 2018 ;8..
Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy. Applied Physics Letters. 2018 ;112..
Synthesis Gas Conversion over Rh-Mn-WxC/SiO2 Catalysts Prepared by Atomic Layer Deposition. ACS Catalysis. 2018 ;8(11):10707-10720..
Transition state redox during dynamical processes in semiconductors and insulators. NPG Asia Materials. 2018 ;10:45-51..
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM. Nanotechnology. 2017 ;28..
Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li Ni0.5Mn0.3Co0.2 O-2 Cathode. ACS Applied Materials & Interfaces. 2017 ;9:11231-11239..
Degradation of Hole Transport Materials via Exciton-Driven Cyclization. ACS Applied Materials & Interfaces. 2017 ;9:13369-13379.
Distinct Nucleation and Growth Kinetics of Amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A Step toward New Architectures. ACS Applied Materials & Interfaces. 2017 ;9:41034-41042..
In Situ Electrochemical Activation of Atomic Layer Deposition Coated MoS2 Basal Planes for Efficient Hydrogen Evolution Reaction. Advanced Functional Materials. 2017 ;27.
Laser diodes employing GaAs1-xBix/GaAs1-yPy quantum well active regions. Semiconductor Science and Technology. 2017 ;32..
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning. Journal of Crystal Growth. 2017 ;465:48-54..
Understanding and reducing deleterious defects in the metastable alloy GaAsBi. Npg Asia Materials. 2017 ;9..
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice. Journal of Crystal Growth. 2016 ;446:27-32..
Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li Ni0.5Mn0.3Co0.2 O-2 Cathode to Improve Rate Performance in Li-Ion Battery. ACS Applied Materials & Interfaces. 2016 ;8:10572-10580..
Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor. Journal of Crystal Growth. 2016 ;434:138-147..
Enhanced Incorporation of P into Tensile-Strained GaAs1-yPy Layers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures. Ecs Journal of Solid State Science and Technology. 2016 ;5:P183-P189..
First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions. Applied Physics Letters. 2016 ;109..
Growth far from equilibrium: Examples from III-V semiconductors. Applied Physics Reviews. 2016 ;3..
Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics. Journal of Crystal Growth. 2016 ;452:276-280..
Impact of Sb Incorporation on MOVPE-Grown "Bulk" InGaAs(Sb)N Films for Solar Cell Application. IEEE Journal of Photovoltaics. 2016 ;6:1673-1677.
Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix. Applied Physics Letters. 2016 ;108..
Multitechnique Approach for Determining Energy Levels and Exciton Binding Energies of Molecules for Organic Electronics. Journal of Physical Chemistry C. 2016 ;120:1366-1374.
Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A. 2016 ;34.
Regrowth of quantum cascade laser active regions on metamorphic buffer layers. Journal of Crystal Growth. 2016 ;452:268-271.
Role of the Cu-ZrO2 Interfacial Sites for Conversion of Ethanol to Ethyl Acetate and Synthesis of Methanol from CO2 and H-2. Acs Catalysis. 2016 ;6:7040-7050..
13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE. Journal of Vacuum Science & Technology A. 2015 ;33..
Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing. Electronics Letters. 2015 ;51:1098-1099..
Catalyst Design with Atomic Layer Deposition. Acs Catalysis. 2015 ;5:1804-1825..
The Effect of the Bi Precursors, (CH3)(3)Bi and (C2H5)(3)Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films. Chemical Vapor Deposition. 2015 ;21:166-175..
Enhanced Activity and Stability of TiO2-Coated Cobalt/Carbon Catalysts for Electrochemical Water Oxidation. Acs Catalysis. 2015 ;5:3463-3469..